amplifiers and high energy pulse circuits. Part Number. IRF IRF N.I Semi-Conductors encourages customers to verify that datasheets are current. IRF datasheet, IRF pdf, IRF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, A, V, Ohm, N-Channel Power MOSFET. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power.

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IRF720 N-Channel Mosfet

For example, parts with lead Pb terminations are irg720 RoHS-compliant. C, Dec Document Number: No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. C, Dec 0 10 5 Ciss Fig.

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IRF, SiHF Datasheet

Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry.

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Repetitive rating; catasheet width limited by maximum junction temperature see fig. Products may be manufactured at one of several qualified locations.